用于上层结构型硅基串联电池的多孔SiO₂/MgF₂宽带减反射涂层。
Porous SiO₂/MgF₂ broadband antireflection coatings for superstrate-type silicon-based tandem cells.
作者信息
Wang Na-Fu, Kuo Ting-Wei, Tsai Yu-Zen, Lin Shi-Xiong, Hung Pin-Kun, Lin Chiung-Lin, Houng Mau-Phon
机构信息
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan.
出版信息
Opt Express. 2012 Mar 26;20(7):7445-53. doi: 10.1364/OE.20.007445.
The purpose of this study is to reduce the glass substrate reflectivity over a wide spectral range (400-1200 nm) without having high reflectivity in the near-infrared region. After making porous SiO₂/MgF₂ double-layer antireflection (DLAR) thin film structure, the superstrate-type silicon-based tandem cells are added. In comparison to having only silicon-based tandem solar cells, the short-circuit current density has improved by 6.82% when porous SiO₂/MgF₂ DLAR thin film is applied to silicon-based tandem solar cells. This study has demonstrated that porous SiO₂/MgF₂ DLAR thin film structure provides antireflection properties over a broad spectral range (400-1200 nm) without having high reflectivity at near-infrared wavelengths.
本研究的目的是在宽光谱范围（400 - 1200纳米）内降低玻璃基板的反射率，同时在近红外区域不具有高反射率。制备多孔SiO₂/MgF₂双层减反射（DLAR）薄膜结构后，添加了超strate型硅基串联电池。与仅具有硅基串联太阳能电池相比，当将多孔SiO₂/MgF₂ DLAR薄膜应用于硅基串联太阳能电池时，短路电流密度提高了6.82%。本研究表明，多孔SiO₂/MgF₂ DLAR薄膜结构在宽光谱范围（400 - 1200纳米）内提供减反射特性，且在近红外波长处不具有高反射率。
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