Lee Doo Hyong, Kim Hee Soo, Noh Seung Jeong
Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, 126 Jukjeon-Dong, Suji-Gu, Yongin 448-701, South Korea.
J Nanosci Nanotechnol. 2011 May;11(5):4312-6. doi: 10.1166/jnn.2011.3697.
Recently, nanostructured zinc oxide (ZnO) for many different applications in micro- and opto-electronic devices has been studied intensively. However, its structural and electrical properties still require improvements for ZnO-based transparent electronics. In this study, we fabricated ZnO films (thicknesses from 30 to 70 nm) on glass substrates using atomic layer deposition (ALD) and investigated the film properties in relation with substrate temperatures. The processing window (thermal ALD window) of self-limiting growth was observed at 110-190 degrees C. In our thermal ALD window, the average growth rate of ZnO films was 0.26 nm/cycle, and the (002) orientation became dominant with increasing substrate temperatures. For all growth temperatures, ZnO films have shown n-type conductivity. At 170 degrees C, ZnO with good electrical properties of carrier concentration (1.3 x 10(19) cm(-3)), mobility (18 cm2/Vs), and resistivity (2.7 x 10(-2) omegacm) was successfully obtained.
最近，用于微电子和光电器件中许多不同应用的纳米结构氧化锌（ZnO）受到了深入研究。然而，对于基于ZnO的透明电子器件，其结构和电学性能仍需改进。在本研究中，我们使用原子层沉积（ALD）在玻璃基板上制备了ZnO薄膜（厚度为30至70纳米），并研究了与基板温度相关的薄膜性能。在110-190摄氏度观察到自限性生长的工艺窗口（热ALD窗口）。在我们的热ALD窗口中，ZnO薄膜的平均生长速率为0.26纳米/循环，并且随着基板温度的升高，（002）取向占主导地位。对于所有生长温度，ZnO薄膜均表现出n型导电性。在170摄氏度时，成功获得了具有良好电学性能的ZnO，其载流子浓度为1.3×10¹⁹厘米⁻³，迁移率为18厘米²/伏秒，电阻率为2.7×10⁻²欧姆厘米。
