NTT Basic Research Laboratories, NTT Corporation, 3-1, Morinosato-Wakamiya Atsugi, Kanagawa 243-0198, Japan.
Nano Lett. 2011 Sep 14;11(9):3634-42. doi: 10.1021/nl201449m. Epub 2011 Aug 1.
High-Q nanocavities have been extensively studied recently because they are considered key elements in low-power photonic devices and integrated circuits. Here we demonstrate that ultrahigh-Q (>10(6)) nanocavities can be created by employing scanning probe lithography on a prepatterned line defect in a silicon photonic crystal. This is the first realization of ultrahigh-Q nanocavities by the postprocess modification of photonic crystals. With this method, we can form an ultrahigh-Q nanocavity with controllable cavity parameters at an arbitrary position along a line defect. Furthermore, the fabricated nanocavity achieves ultralow power all-optical bistable operation owing to its large cavity enhancement effect. This demonstration indicates the possibility of realizing photonic integrated circuits on demand, where various circuit patterns are written with a nanoprobe on a universal photonic crystal substrate.
高 Q 值纳米腔最近得到了广泛研究，因为它们被认为是低功耗光子器件和集成电路的关键元件。在这里，我们通过在硅光子晶体中的预图案线缺陷上使用扫描探针光刻来演示可以创建超高 Q 值（>10^6）纳米腔。这是通过光子晶体的后处理修饰首次实现超高 Q 值纳米腔。通过这种方法，我们可以在沿线缺陷的任意位置形成具有可控腔参数的超高 Q 值纳米腔。此外，由于其大的腔增强效应，所制造的纳米腔实现了超低功率全光双稳操作。该演示表明了在需求上实现光子集成电路的可能性，其中各种电路图案可以用纳米探针在通用光子晶体衬底上写入。
