Sumikura Hisashi, Kuramochi Eiichi, Taniyama Hideaki, Notomi Masaya
1] NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan [2] NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Sci Rep. 2014 May 23;4:5040. doi: 10.1038/srep05040.
Dopants in silicon (Si) have attracted attention in the fields of photonics and quantum optics. However, the optical characteristics are limited by the small spontaneous emission rate of dopants in Si. This study demonstrates a large increase in the spontaneous emission rate of copper isoelectronic centres (Cu-IECs) doped into Si photonic crystal nanocavities. In a cavity with a quality factor (Q) of ~16,000, the photoluminescence (PL) lifetime of the Cu-IECs is 1.1 ns, which is 30 times shorter than the lifetime of a sample without a cavity. The PL decay rate is increased in proportion to Q/Vc (Vc is the cavity mode volume), which indicates the Purcell effect. This is the first demonstration of a cavity-enhanced ultrafast spontaneous emission from dopants in Si, and it may lead to the development of fast and efficient Si light emitters and Si quantum optical devices based on dopants with efficient optical access.
硅（Si）中的掺杂剂在光子学和量子光学领域引起了关注。然而，光学特性受到硅中掺杂剂自发发射率低的限制。本研究表明，掺杂到硅光子晶体纳米腔中的铜等电子中心（Cu-IECs）的自发发射率大幅提高。在品质因数（Q）约为16000的腔中，Cu-IECs的光致发光（PL）寿命为1.1 ns，比无腔样品的寿命短30倍。PL衰减率与Q/Vc（Vc是腔模体积）成正比，这表明了珀塞尔效应。这是首次证明硅中掺杂剂的腔增强超快自发发射，它可能会推动基于具有高效光学通道的掺杂剂的快速高效硅发光体和硅量子光学器件的发展。
