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基于硅光子晶体平台的半导体纳米线实现的可移动高 Q 值纳米谐振器。

Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform.

出版信息

Nat Mater. 2014 Mar;13(3):279-85. doi: 10.1038/nmat3873.

Abstract

Subwavelength semiconductor nanowires have recently attracted interest for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, realizing tight light confinement or efficient coupling with photonic circuits is not straightforward and remains a challenge. Here we show that a high-Q nanocavity can be created by placing a single III–V semiconductor nanowire with a diameter of under 100 nm in a grooved waveguide in a Si photonic crystal, by means of nanoprobe manipulation. We observe very fast spontaneous emission (91 ps) from nanowires accelerated by the strong Purcell enhancement in nanocavities, which proves that very strong light confinement can be achieved. Furthermore, this system enables us to move the nanocavity anywhere along the waveguide. This configuration provides a significant degree of flexibility in integrated photonics and permits the addition and displacement of various functionalities of III–V nanocavity devices in Si photonic circuits.

摘要

亚波长半导体纳米线由于具有各种独特的光学性质,为器件的小型化提供了巨大的潜力,因此最近引起了人们对光子学应用的兴趣。然而,实现紧密的光限制或与光子电路的有效耦合并不简单,仍然是一个挑战。在这里,我们通过使用纳米探针操纵,展示了通过在硅光子晶体中的凹槽波导中放置直径小于 100nm 的单个 III-V 半导体纳米线,可以创建一个高 Q 值的纳米腔。我们观察到纳米线的自发发射非常快(91ps),这是由纳米腔中的强 Purcell 增强加速的,这证明了可以实现非常强的光限制。此外,该系统使我们能够将纳米腔沿波导移动到任何位置。这种配置为集成光子学提供了很大的灵活性,并允许在硅光子电路中添加和移动 III-V 纳米腔器件的各种功能。

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