Yıldız D E, Dökme I
J Appl Phys. 2011 Jul 1;110(1):14507-145075. doi: 10.1063/1.3602090. Epub 2011 Jul 8.
The dielectric properties and electrical conductivity of Al∕SiO(2)∕p-Si (MIS) Schottky diodes (SDs) in the frequency range of 10 kHz to 10 MHz and the gate voltage range of -2 to 6 V have been investigated in detail using experimental C-V and G∕w-V measurements. Experimental results indicated that the voltage dependence of the real part of the dielectric constant (ɛ') and loss tangent (tan δ) characteristics have a peak at each frequency. The values of ɛ' increase with decreasing frequency and tend to be frequency independent in the negative voltage region. However, the values of the dielectric loss (ɛ″) increase with decreasing frequency at each voltage. In contrast, ɛ' and ɛ″ are almost found to decrease, and the ac electrical conductivity (σ(ac)) and the real part of the electric modulus (M') increase, with increasing frequency. In addition, the imaginary part of the electric modulus (M″) showed a peak that shifts to a higher frequency with increasing applied voltage. It can be concluded that interfacial polarization can more easily occur at low frequencies, and consequently the majority of interface states at the Si-SiO(2) interface contribute to the deviation of the dielectric properties of Al∕SiO(2)∕p-Si (MIS) SDs.
利用实验性的电容-电压（C-V）和电导/角频率-电压（G∕ω-V）测量方法，详细研究了Al∕SiO(2)∕p-Si（金属-绝缘层-半导体）肖特基二极管（SDs）在10 kHz至10 MHz频率范围以及-2至6 V栅极电压范围内的介电特性和电导率。实验结果表明，介电常数实部（ɛ'）和损耗角正切（tan δ）特性的电压依赖性在每个频率处都有一个峰值。ɛ'的值随频率降低而增加，并且在负电压区域趋于与频率无关。然而，介电损耗（ɛ″）的值在每个电压下都随频率降低而增加。相反，随着频率增加，ɛ'和ɛ″几乎都减小，而交流电导率（σ(ac)）和电模量实部（M'）增加。此外，电模量虚部（M″）呈现出一个峰值，该峰值随着施加电压的增加向更高频率移动。可以得出结论，界面极化在低频时更容易发生，因此Si-SiO(2)界面处的大多数界面态导致了Al∕SiO(2)∕p-Si（MIS）SDs介电特性的偏差。
