Ashery Adel, Gaballah Ahmed E H, Turky Gamal M, Basyooni-Murat Kabatas Mohamed A
Solid State Physics Department, Physics Research Institute, National Research Centre, 33 El-Bohouth St, Dokki, Giza 12622, Egypt.
Photometry and Radiometry Division, National Institute of Standards (NIS), Tersa St, Al-Haram, Giza 12211, Egypt.
Gels. 2024 Aug 20;10(8):537. doi: 10.3390/gels10080537.
The current work presents a new structure based on Au/PVA/SiO/p-Si/Al that has not been studied before. An aqueous solution of polyvinyl alcohol (PVA) polymer gel was deposited on the surface of SiO/Si using the spin-coating technique. The silicon wafer was left to be oxidized in a furnace at 1170 k for thirty minutes, creating an interdiffusion layer of SiO. The variations in the dielectric constant (Є'), dielectric loss (Є″), and dielectric tangent (tanδ) with the change in the frequency, voltage, and temperature were analyzed. The results showed an increase in the dielectric constant (Є') and a decrease in the dielectric loss (Є″) and tangent (tanδ); thus, the Au/PVA/SiO/p-Si/Al heterostructure has opened up new frontiers for the semiconductor industry, especially for capacitor manufacturing. The Cole-Cole diagrams of the Є″ and Є' have been investigated at different temperatures and voltages. The ideality factor (n), barrier height (Φ), series resistance (R), shunt resistance (R), and rectification ratio (RR) were also measured at different temperatures.
当前的工作展示了一种基于Au/PVA/SiO/p-Si/Al的新结构，此前尚未对其进行过研究。使用旋涂技术将聚乙烯醇（PVA）聚合物凝胶的水溶液沉积在SiO/Si表面。将硅晶片置于炉中在1170 K下氧化30分钟，形成SiO的互扩散层。分析了介电常数（Є'）、介电损耗（Є″）和介电正切（tanδ）随频率、电压和温度变化的情况。结果显示介电常数（Є'）增加，介电损耗（Є″）和正切（tanδ）减小；因此，Au/PVA/SiO/p-Si/Al异质结构为半导体行业，尤其是电容器制造开辟了新的领域。研究了不同温度和电压下Є″和Є'的科尔 - 科尔图。还在不同温度下测量了理想因子（n）、势垒高度（Φ）、串联电阻（R）、并联电阻（R）和整流比（RR）。
