Haque M S, Teo K B K, Rupensinghe N L, Ali S Z, Haneef I, Maeng Sunglyul, Park J, Udrea F, Milne W I
Department of Engineering, CAPE, University of Cambridge, Cambridge CB3 0FA, UK.
Nanotechnology. 2008 Jan 16;19(2):025607. doi: 10.1088/0957-4484/19/02/025607. Epub 2007 Dec 6.
The direct deposition of carbon nanotubes on CMOS microhotplates is demonstrated in this paper. Tungsten microhotplates, fabricated on thin SOI membranes aside CMOS control circuitry, are used to locally grow carbon nanotubes by chemical vapour deposition. Unlike bulk heating of the entire chip, which could cause degradation to CMOS devices and interconnects due to high growth temperatures in excess of 500 °C, this novel technique allows carbon nanotubes to be grown on-chip in localized regions. The microfabricated heaters are thermally isolated from the rest of the CMOS chip as they are on the membranes. This allows carbon nanotubes to be grown alongside CMOS circuitry on the same wafer without any external heating, thus enabling new applications (e.g. smart gas sensing) where the integration of CMOS and carbon nanotubes is required.
本文展示了碳纳米管在CMOS微热板上的直接沉积。在CMOS控制电路旁边的薄SOI膜上制造的钨微热板，用于通过化学气相沉积法在局部区域生长碳纳米管。与对整个芯片进行体加热不同，由于生长温度超过500°C的高温会导致CMOS器件和互连线路退化，这种新技术允许在芯片上的局部区域生长碳纳米管。微制造的加热器由于位于薄膜上，与CMOS芯片的其余部分热隔离。这使得碳纳米管能够在同一晶圆上与CMOS电路一起生长，而无需任何外部加热，从而实现了需要CMOS和碳纳米管集成的新应用（例如智能气体传感）。
