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具有自旋-轨道相互作用的二维电子系统中的界面态。

Interface states in two-dimensional electron systems with spin-orbital interaction.

机构信息

V A Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Moscow District, 141190, Russia.

出版信息

J Phys Condens Matter. 2011 Oct 5;23(39):395601. doi: 10.1088/0953-8984/23/39/395601. Epub 2011 Sep 15.

Abstract

Interface states at a boundary between regions with different spin-orbit interactions (SOIs) in two-dimensional (2D) electron systems are investigated within the one-band effective mass method with generalized boundary conditions for envelope functions. We have found that the interface states unexpectedly exist even if the effective interface potential equals zero. Depending on the system parameters, the energy of these states can lie in either or both forbidden and conduction bands of bulk states. The interface states have chiral spin texture similar to that of the edge states in 2D topological insulators. However, their energy spectrum is more sensitive to the interfacial potential, the largest effect being produced by the spin-dependent component of the interfacial potential. We have also studied the size quantization of the interface states in a strip of 2D electron gas with SOI and found an unusual (non-monotonic) dependence of the quantization energy on the strip width.

摘要

在二维(2D)电子系统中,具有不同自旋轨道相互作用(SOI)的区域之间的界面态,通过对包络函数的广义边界条件进行单带有效质量方法进行了研究。我们发现,即使有效界面势等于零,界面态也会意外存在。根据系统参数的不同,这些态的能量可以位于体态的禁带或导带中。界面态具有与二维拓扑绝缘体边缘态相似的手性自旋结构。然而,它们的能谱对界面势更为敏感,界面势的自旋相关分量产生最大的影响。我们还研究了具有 SOI 的二维电子气条中的界面态的尺寸量子化,发现了量化能对条宽的不寻常(非单调)依赖性。

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