Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan.
ACS Nano. 2011 Oct 25;5(10):7748-53. doi: 10.1021/nn203357e. Epub 2011 Oct 3.
This study describes a strategy for developing ultra-high-responsivity broadband Si-based photodetectors (PDs) using ZnO nanorod arrays (NRAs). The ZnO NRAs grown by a low-temperature hydrothermal method with large growth area and high growth rate absorb the photons effectively in the UV region and provide refractive index matching between Si and air for the long-wavelength region, leading to 3 and 2 orders of magnitude increase in the responsivity of Si metal-semiconductor-metal PDs in the UV and visible/NIR regions, respectively. Significantly enhanced performances agree with the theoretical analysis based on the finite-difference time-domain method. These results clearly demonstrate that Si PDs combined with ZnO NRAs hold high potential in next-generation broadband PDs.
本研究描述了一种使用氧化锌纳米棒阵列（ZnO NRAs）开发超高响应度宽带硅基光电探测器（PDs）的策略。通过低温水热法生长的具有大生长面积和高生长速率的 ZnO NRAs 可有效吸收紫外区域的光子，并为长波长区域提供硅和空气之间的折射率匹配，从而使 Si 金属-半导体-金属 PDs 在紫外和可见/近红外区域的响应度分别提高了 3 和 2 个数量级。显著增强的性能与基于有限差分时域方法的理论分析相符。这些结果清楚地表明，结合 ZnO NRAs 的 Si PDs 在下一代宽带 PDs 中具有很高的潜力。
