Department of Physics, National Taiwan University, Taipei, Taiwan.
Nanotechnology. 2011 Jul 29;22(30):305201. doi: 10.1088/0957-4484/22/30/305201. Epub 2011 Jul 1.
By using Au-nanorod (Au-NR) doped graphene as a transparent conducting electrode, Si-based metal-oxide-semiconductor (MOS) photodetectors (PDs) exhibit high external quantum efficiency (EQE) and fast response time. It is found that upon adding Au-NRs to the graphene, a significant increase in EQE is observed for both planar and Si-nanotip (Si-NT) MOS PDs. The planar Si-based MOS PDs reveal a notable photoresponse with an EQE of 49% at the peak wavelength of 530 nm under zero bias and an EQE of 66% at the peak wavelength of 600 nm under - 0.4 V bias. For the Si-NTs MOS PD, it exhibits a relatively high EQE of 71% under - 4 V bias due to the effect of light trapping arising from the nature of the Si-NT array.
采用金纳米棒（Au-NR）掺杂石墨烯作为透明导电电极，硅基金属-氧化物-半导体（MOS）光电探测器（PD）表现出高外量子效率（EQE）和快速响应时间。研究发现，在向石墨烯中添加 Au-NRs 后，平面和硅纳米尖（Si-NT）MOS PD 的 EQE 均显著增加。平面 Si 基 MOS PD 在零偏压下，峰值波长为 530nm 时，光响应的 EQE 高达 49%，在-0.4V 偏压下，峰值波长为 600nm 时，EQE 高达 66%。对于 Si-NTs MOS PD，由于 Si-NT 阵列的性质导致光捕获效应，在-4V 偏压下，它表现出相对较高的 EQE（71%）。
