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本文引用的文献

1
Electron transfer process between Ce3+ donor and Yb3+ acceptor levels in the bandgap of Y3Al5O12 (YAG).在 Y3Al5O12（YAG）的带隙中，Ce3+给体和 Yb3+受体能级之间的电子转移过程。
J Phys Condens Matter. 2011 Jun 1;23(21):215502. doi: 10.1088/0953-8984/23/21/215502. Epub 2011 May 11.

通过光导率测量的温度依赖性分析Y(3)Al(5)O(12)与Y(3)Ga(5)O(12)固溶体中Ce发光猝灭。

Analysis of Ce luminescence quenching in solid solutions between Y(3)Al(5)O(12) and Y(3)Ga(5)O(12) by temperature dependence of photoconductivity measurement.

作者信息

Ueda Jumpei, Tanabe Setsuhisa, Nakanishi Takayuki

出版信息

J Appl Phys. 2011 Sep 1;110(5):53102-531026. doi: 10.1063/1.3632069. Epub 2011 Sep 7.

DOI:10.1063/1.3632069
PMID:21990945
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3189254/
Abstract

Photocurrent excitation spectra were measured to investigate the quenching in the garnet solid solutions. Intense photocurrent excitation bands attributed to the lowest 5d(1) and the second lowest 5d(2) levels were observed in the Ce-doped Y(3)Al(2)Ga(3)O(12) (Ce:YAGG) and Y(3)Ga(5)O(12) (Ce:YGG). Based on the results of temperature dependence of photoconductivity, the 5d(1) and 5d(2) levels in the Ce:YAGG are found to be located below and within the conduction band, respectively, while both levels in the Ce:YGG are found to be located within its conduction band located at lower energy levels. In addition, the threshold of photoionization from the 4f level of Ce(3+) to the conduction band in the Ce:YAGG and Ce:YGG were estimated to be 3.2, and 2.8 eV, respectively. We conclude that the main quenching process in the Ce:YAGG is caused by the thermally stimulated ionization process with activation energy of 90 meV from the 5d(1) to the conduction band, and that in the Ce:YGG is caused by the direct ionization process from the 5d levels to the conduction band.

摘要

测量了光电流激发光谱以研究石榴石固溶体中的猝灭现象。在掺铈的钇铝镓石榴石（Ce:YAGG）和钇镓石榴石（Ce:YGG）中观察到了归因于最低的5d(1)和次低的5d(2)能级的强的光电流激发带。基于光电导率的温度依赖性结果，发现Ce:YAGG中的5d(1)和5d(2)能级分别位于导带下方和导带内，而Ce:YGG中的这两个能级都位于其能量较低的导带内。此外，估计Ce:YAGG和Ce:YGG中从Ce(3+)的4f能级到导带的光电离阈值分别为3.2和2.8 eV。我们得出结论，Ce:YAGG中的主要猝灭过程是由从5d(1)到导带的激活能为90 meV的热激发电离过程引起的，而Ce:YGG中的主要猝灭过程是由从5d能级到导带的直接电离过程引起的。