Brimont A, Thomson D J, Sanchis P, Herrera J, Gardes F Y, Fedeli J M, Reed G T, Martí J
Nanophotonics Technology Center, Universitat Politécnica de Valencia, Camino de Vera, s/n 46022 Valencia.
Opt Express. 2011 Oct 10;19(21):20876-85. doi: 10.1364/OE.19.020876.
While current optical communication networks efficiently carry and process huge amounts of digital information over large and medium distances, silicon photonics technology has the capacity to meet the ceaselessly increasing demand for bandwidth via energy efficient, inexpensive and mass producible short range optical interconnects. In this context, handling electrical-to-optical data conversion through compact and high speed electro-optical modulators is of paramount importance. To tackle these challenges, we combine the attractive properties of slow light propagation in a nanostructured periodic waveguide together with a high speed semiconductor pn diode, and demonstrate a highly efficient and mass manufacturable 500 µm-long silicon electro-optical device, exhibiting error free modulation up to 20 Gbit/s. These results, supported by modulation rate capabilities reaching 40 Gbit/s, pave a foreseeable way towards dense, low power and ultra fast integrated networks-on-chip for future chip-scale high performance computing systems.
虽然当前的光通信网络能够在中长距离上高效地承载和处理大量数字信息，但硅光子技术有能力通过节能、廉价且可大规模生产的短距离光互连来满足对带宽不断增长的需求。在这种背景下，通过紧凑且高速的电光调制器来处理电 - 光数据转换至关重要。为应对这些挑战，我们将纳米结构周期性波导中慢光传播的诱人特性与高速半导体 pn 二极管相结合，展示了一种高效且可大规模制造的 500 µm 长的硅电光器件，该器件在高达 20 Gbit/s 的速率下实现无误码调制。这些结果，在调制速率能力达到 40 Gbit/s 的支持下，为未来芯片级高性能计算系统的密集、低功耗和超快速片上集成网络铺平了一条可预见的道路。
