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通过局部聚焦电子束诱导化学气相沉积法测定吸附质的表面扩散系数和停留时间。

Determination of the surface diffusion coefficient and the residence time of adsorbates via local focused electron beam induced chemical vapour deposition.

作者信息

Szkudlarek Aleksandra, Gabureac Mihai, Utke Ivo

机构信息

AGH University of Science and Technology, Al. Mickiewicza 30, 30-059 Krakow, Poland.

出版信息

J Nanosci Nanotechnol. 2011 Sep;11(9):8074-8. doi: 10.1166/jnn.2011.5066.

Abstract

In this paper we present a model for local gas assisted focused electron beam induced deposition which allows estimating the surface diffusion coefficient and the residence time of volatile precursor adsorbates. Elaborating the existing continuum model for one adsorbate species and using a novel set of parameters we simplified the differential equation describing the dynamics of this process. We will show that stationary exposure experiments do not allow for a unique determination of the parameters residence time, surface diffusion coefficient, and net cross-section. Rather an estimation of parameter windows is possible by assuming meaningful values for the electron dissociation cross section. The model was applied to the experimental results for Cu(hfac)2 as a gas precursor.

摘要

在本文中,我们提出了一种用于局部气体辅助聚焦电子束诱导沉积的模型,该模型能够估算挥发性前驱体吸附物的表面扩散系数和停留时间。通过阐述针对单一吸附物种的现有连续介质模型并使用一组新的参数,我们简化了描述该过程动力学的微分方程。我们将表明,静态曝光实验无法唯一确定停留时间、表面扩散系数和净截面等参数。相反,通过假设电子解离截面的合理值,可以对参数窗口进行估计。该模型已应用于以Cu(hfac)2作为气体前驱体的实验结果。

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