Lassiter Matthew G, Rack Philip D
University of Tennessee, 308 Dougherty Engineering Hall, Knoxville, TN 37996, USA.
Nanotechnology. 2008 Nov 12;19(45):455306. doi: 10.1088/0957-4484/19/45/455306. Epub 2008 Oct 8.
In this paper, we relate experimental electron beam induced etching profiles to various electron limited and mass transport limited regimes via a continuum model. In particular, we develop a series of models with increasing complexity and demonstrate the effects and interactions that the precursor gas adsorption kinetics, the electron flux distribution, and the etch product desorption kinetics have on the resultant nanoscale etching profile. Unlike analogous electron beam induced deposition models, it is shown that one must consider the diffusion, desorption, and possible re-dissociation of the resultant etch product to understand the observed etching profiles. To confirm the explanation of the etch results, a defocus experiment was performed showing transitions from the electron flux limited to the mass transport limited to the etch product dissociation limited regimes.
在本文中，我们通过一个连续介质模型将实验性电子束诱导蚀刻轮廓与各种电子限制和质量传输限制机制联系起来。特别是，我们开发了一系列复杂度不断增加的模型，并展示了前驱体气体吸附动力学、电子通量分布和蚀刻产物解吸动力学对所得纳米级蚀刻轮廓的影响及相互作用。与类似的电子束诱导沉积模型不同，结果表明，为了理解观察到的蚀刻轮廓，必须考虑所得蚀刻产物的扩散、解吸和可能的再解离。为了证实对蚀刻结果的解释，进行了一次散焦实验，该实验展示了从电子通量限制机制到质量传输限制机制再到蚀刻产物解离限制机制的转变。
