Park Min Joo, Kwak Joon Seop
Department of Printed Electronics Engineering (WCU), Sunchon National University, Jeonnam 540-742, Korea.
J Nanosci Nanotechnol. 2012 May;12(5):4265-8. doi: 10.1166/jnn.2012.5939.
InGaN/GaN based nano-pillar light emitting diodes (LEDs) with a diameter of 200-300 nm and a height of 500 nm are fabricated by inductively coupled plasma etching using self-assembled ITO nano-dots as etching mask, which were produced by wet etching of the as-deposited ITO films. The peak PL intensity of the nano-pillar LEDs was significantly higher than that of the as-grown planar LEDs, which can be attributed to the improvement of external quantum efficiency of the nano-pillar LEDs due to the large sidewall of the nano-pillars. We have also demonstrated electrical pumping of the InGaN/GaN based nano-pillar LEDs with a self-aligned TiO2 layer as a passivation of sidewall of the nano-pillars.
采用电感耦合等离子体刻蚀技术，以自组装的ITO纳米点作为刻蚀掩膜，制备了直径为200 - 300 nm、高度为500 nm的InGaN/GaN基纳米柱发光二极管（LED），其中自组装ITO纳米点是通过对沉积态ITO薄膜进行湿法刻蚀制备的。纳米柱LED的峰值光致发光（PL）强度显著高于生长态的平面LED，这可归因于纳米柱较大的侧壁使得纳米柱LED的外量子效率得到了提高。我们还展示了以自对准TiO2层作为纳米柱侧壁钝化层的InGaN/GaN基纳米柱LED的电泵浦特性。
