ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea.
Adv Mater. 2012 Jan 17;24(3):402-6. doi: 10.1002/adma.201103679. Epub 2011 Dec 12.
Multilevel non-volatile memory for high-density date storage is achieved by using the deterministic control of ferroelectric polarization. In a real ferroelectric thin-film system, eight stable and reproducible polarization states are realized (i.e., 3-bit data storage) by adjusting the displacement current. This approach can be used to triple or quadruple the memory density, even at existing feature scales.
通过使用铁电极化的确定性控制，实现了用于高密度数据存储的多层非易失性存储器。在实际的铁电薄膜系统中，通过调节位移电流，实现了八个稳定且可重复的极化状态（即 3 位数据存储）。即使在现有特征尺寸下，这种方法也可以将存储密度提高两倍或四倍。
