• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

铁电薄膜中可调多态转换的动力学控制。

Kinetic control of tunable multi-state switching in ferroelectric thin films.

机构信息

Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.

Extreme Materials Initiative, Geophysical Laboratory, Carnegie Institution for Science, Washington, DC, 20015, USA.

出版信息

Nat Commun. 2019 Mar 20;10(1):1282. doi: 10.1038/s41467-019-09207-9.

DOI:10.1038/s41467-019-09207-9
PMID:30894533
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6427024/
Abstract

Deterministic creation of multiple ferroelectric states with intermediate values of polarization remains challenging due to the inherent bi-stability of ferroelectric switching. Here we show the ability to select any desired intermediate polarization value via control of the switching pathway in (111)-oriented PbZrTiO films. Such switching phenomena are driven by kinetic control of the volume fraction of two geometrically different domain structures which are generated by two distinct switching pathways: one direct, bipolar-like switching and another multi-step switching process with the formation of a thermodynamically-stable intermediate twinning structure. Such control of switching pathways is enabled by the competition between elastic and electrostatic energies which favors different types of ferroelastic switching that can occur. Overall, our work demonstrates an alternative approach that transcends the inherent bi-stability of ferroelectrics to create non-volatile, deterministic, and repeatedly obtainable multi-state polarization without compromising other important properties, and holds promise for non-volatile multi-state functional applications.

摘要

由于铁电开关的固有双稳性,确定性地产生具有中间极化值的多个铁电状态仍然具有挑战性。在这里,我们展示了通过控制(111)取向的 PbZrTiO 薄膜中的开关路径,选择任何所需中间极化值的能力。这种开关现象是由两种不同的开关路径产生的两种几何上不同的畴结构的体积分数的动力学控制驱动的:一种是直接的双极型开关,另一种是具有热力学稳定中间孪晶结构形成的多步开关过程。这种开关路径的控制是由弹性和静电能之间的竞争实现的,这种竞争有利于可能发生的不同类型的铁弹性开关。总的来说,我们的工作展示了一种替代方法,超越了铁电体的固有双稳性,在不损害其他重要性质的情况下,创建非易失性、确定性和可重复获得的多态极化,为非易失性多态功能应用提供了前景。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/2e9b95137943/41467_2019_9207_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/80d27975a6a2/41467_2019_9207_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/0b7f3264e39c/41467_2019_9207_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/ad16017e5baf/41467_2019_9207_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/78c311806948/41467_2019_9207_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/2e9b95137943/41467_2019_9207_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/80d27975a6a2/41467_2019_9207_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/0b7f3264e39c/41467_2019_9207_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/ad16017e5baf/41467_2019_9207_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/78c311806948/41467_2019_9207_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/5608/6427024/2e9b95137943/41467_2019_9207_Fig5_HTML.jpg

相似文献

1
Kinetic control of tunable multi-state switching in ferroelectric thin films.铁电薄膜中可调多态转换的动力学控制。
Nat Commun. 2019 Mar 20;10(1):1282. doi: 10.1038/s41467-019-09207-9.
2
Polarization Rotation in Ferroelectric Tricolor PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 Superlattices.铁电三色 PbTiO3/SrTiO3/PbZr0.2Ti0.8O3 超晶格中的极化旋转。
ACS Appl Mater Interfaces. 2015 Sep 16;7(36):19906-13. doi: 10.1021/acsami.5b03456. Epub 2015 Sep 4.
3
Formation of polarization needle-like domain and its unusual switching in compositionally graded ferroelectric thin films: an improved phase field model.成分渐变铁电薄膜中极化针状畴的形成及其异常开关特性:一种改进的相场模型
RSC Adv. 2019 Mar 6;9(13):7575-7586. doi: 10.1039/c8ra10614b. eCollection 2019 Mar 1.
4
Voltage-controlled ferroelastic switching in Pb(Zr0.2Ti0.8)O3 thin films.Pb(Zr0.2Ti0.8)O3 薄膜中的电压控制铁弹性转变。
Nano Lett. 2015 Apr 8;15(4):2229-34. doi: 10.1021/nl503806p. Epub 2015 Mar 5.
5
Nanoscale Electrochemical Phenomena of Polarization Switching in Ferroelectrics.铁电体中极化切换的纳米级电化学现象
ACS Appl Mater Interfaces. 2018 Nov 7;10(44):38217-38222. doi: 10.1021/acsami.8b13034. Epub 2018 Oct 25.
6
Revealing Fast Negative Capacitance in PbZrTiO Thin Film with Acicular Ferroelastic Domains.在具有针状铁电弹性畴的PbZrTiO薄膜中揭示快速负电容
Nano Lett. 2024 Oct 9;24(40):12426-12432. doi: 10.1021/acs.nanolett.4c02961. Epub 2024 Oct 1.
7
Ferroelectric polarization reversal via successive ferroelastic transitions.通过连续的铁弹性转变实现铁电极化反转。
Nat Mater. 2015 Jan;14(1):79-86. doi: 10.1038/nmat4119. Epub 2014 Oct 26.
8
Electrical and mechanical switching of ferroelectric polarization in the 70 nm BiFeO3 film.70纳米BiFeO₃薄膜中铁电极化的电学和机械切换
Sci Rep. 2016 Jan 11;6:19092. doi: 10.1038/srep19092.
9
Ferroelastic Nanodomain-mediated Mechanical Switching of Ferroelectricity in Thick Epitaxial Films.厚外延膜中铁弹性纳米畴介导的铁电体机械开关效应
Nano Lett. 2021 Jan 13;21(1):445-452. doi: 10.1021/acs.nanolett.0c03875. Epub 2020 Dec 2.
10
Reducing Coercive-Field Scaling in Ferroelectric Thin Films via Orientation Control.通过取向控制降低铁电薄膜中的矫顽场缩放比例
ACS Nano. 2018 May 22;12(5):4736-4743. doi: 10.1021/acsnano.8b01399. Epub 2018 Apr 16.

引用本文的文献

1
Ultrahigh-power-density flexible piezoelectric energy harvester based on freestanding ferroelectric oxide thin films.基于自支撑铁电氧化物薄膜的超高功率密度柔性压电能量收集器。
Nat Commun. 2025 Apr 3;16(1):3192. doi: 10.1038/s41467-025-58386-1.
2
Realization of sextuple polarization states and interstate switching in antiferroelectric CuInPS.反铁电CuInPS中六重极化态的实现及态间转换
Nat Commun. 2024 Mar 26;15(1):2653. doi: 10.1038/s41467-024-46891-8.
3
High Velocity, Low-Voltage Collective In-Plane Switching in (100) BaTiO Thin Films.

本文引用的文献

1
Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories.对称铁电异质结构中的多极化态用于多位非易失性存储器。
Nanoscale. 2017 Dec 14;9(48):19271-19278. doi: 10.1039/c7nr06354g.
2
Three-State Ferroelastic Switching and Large Electromechanical Responses in PbTiO Thin Films.PbTiO 薄膜中的三态铁弹性转变和大机电响应
Adv Mater. 2017 Oct;29(37). doi: 10.1002/adma.201702069. Epub 2017 Jul 31.
3
Ferroelectric symmetry-protected multibit memory cell.铁电对称保护多比特存储单元。
(100)钛酸钡薄膜中的高速、低压面内集体开关效应
Adv Sci (Weinh). 2022 Oct;9(29):e2201530. doi: 10.1002/advs.202201530. Epub 2022 Aug 28.
4
The role of lattice dynamics in ferroelectric switching.晶格动力学在铁电开关中的作用。
Nat Commun. 2022 Mar 2;13(1):1110. doi: 10.1038/s41467-022-28622-z.
5
High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing.用于神经形态计算的铁电隧道结中通过亚纳秒脉冲实现的高精度和线性权重更新。
Nat Commun. 2022 Feb 4;13(1):699. doi: 10.1038/s41467-022-28303-x.
6
Self-supervised learning and prediction of microstructure evolution with convolutional recurrent neural networks.基于卷积循环神经网络的微观结构演化自监督学习与预测
Patterns (N Y). 2021 Apr 22;2(5):100243. doi: 10.1016/j.patter.2021.100243. eCollection 2021 May 14.
7
Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors.缓冲层电容对铁电聚合物电容器和场效应晶体管电学特性的影响。
Materials (Basel). 2021 Mar 8;14(5):1276. doi: 10.3390/ma14051276.
Sci Rep. 2017 Feb 8;7:42196. doi: 10.1038/srep42196.
4
A flexoelectric microelectromechanical system on silicon.硅基的柔性电致伸缩微机电系统。
Nat Nanotechnol. 2016 Mar;11(3):263-6. doi: 10.1038/nnano.2015.260. Epub 2015 Nov 16.
5
A diode for ferroelectric domain-wall motion.用于铁电畴壁运动的二极管。
Nat Commun. 2015 Jun 10;6:7361. doi: 10.1038/ncomms8361.
6
Controlling domain wall motion in ferroelectric thin films.控制铁电薄膜中的畴壁运动。
Nat Nanotechnol. 2015 Feb;10(2):145-50. doi: 10.1038/nnano.2014.320. Epub 2015 Jan 26.
7
Ferroelectric polarization reversal via successive ferroelastic transitions.通过连续的铁弹性转变实现铁电极化反转。
Nat Mater. 2015 Jan;14(1):79-86. doi: 10.1038/nmat4119. Epub 2014 Oct 26.
8
Super switching and control of in-plane ferroelectric nanodomains in strained thin films.应变薄 films 中面内铁电纳米畴的超交换和控制。
Nat Commun. 2014 Jul 14;5:4415. doi: 10.1038/ncomms5415.
9
Stationary domain wall contribution to enhanced ferroelectric susceptibility.静止畴壁对增强铁电体极化率的贡献。
Nat Commun. 2014;5:3120. doi: 10.1038/ncomms4120.
10
Non-volatile memory based on the ferroelectric photovoltaic effect.基于铁电光伏效应的非易失性存储器。
Nat Commun. 2013;4:1990. doi: 10.1038/ncomms2990.