School of Materials Science and Engineering, Xiangtan University, Hunan Xiangtan, 411105, China.
Hunan Provincial National Defense Key Laboratory of Key Film Materials & Application for Equipment, Xiangtan University, Hunan Xiangtan, 411105, China.
Sci Rep. 2017 Jul 3;7(1):4525. doi: 10.1038/s41598-017-04825-z.
Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retention and difficulty of exactly controlling the middle polarization states. In order to overcome the issues, we develop a ferroelectric tunnel junction with smooth ultrathin polycrystalline BiFeO (BFO) film. Through controlling the polarization state and oxygen vacancy migration using voltage pulses, we demonstrate that voltage-controlled barrier yields a memristive behavior in the device, in which the resistance variations exceed over two orders of magnitude. And we achieve multi logic states written and read easily using voltage pulses in the device. Especially the device is integrated with the silicon technology in modern microelectronics. Our results suggest new opportunity for ferroelectrics as high storage density nonvolatile memories.
多层数据铁电隧道结是进一步提高铁电随机存取存储器存储密度的突破。然而，这些铁电隧道结的应用受到外延钙钛矿异质结构成本高、保持性不理想以及难以精确控制中间极化状态的限制。为了克服这些问题，我们开发了一种具有平滑超薄膜多晶 BiFeO（BFO）的铁电隧道结。通过使用电压脉冲控制极化状态和氧空位迁移，我们证明了电压控制势垒在器件中产生了忆阻行为，其中电阻变化超过两个数量级。并且我们在器件中使用电压脉冲实现了易于写入和读取的多逻辑状态。特别是该器件与现代微电子学中的硅技术集成。我们的结果为铁电体作为高存储密度非易失性存储器提供了新的机会。
