一种无需后处理的标准 CMOS 湿度传感器。

A standard CMOS humidity sensor without post-processing.

机构信息

Maenaka Human-sensing Fusion Project, Himeji-shi, Hyogo-ken, Japan.

出版信息

Sensors (Basel). 2011;11(6):6197-202. doi: 10.3390/s110606197. Epub 2011 Jun 8.

DOI:10.3390/s110606197

PMID:22163949

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3231417/

Abstract

A 2 μW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

摘要

采用 LFoundry 0.15μm CMOS 技术，无需后处理，开发出一款 2μW 功耗、电压输出、相对湿度精度为 5%的湿度传感器。该传感器由编织的横向电极阵列组成，采用 CMOS 顶层金属实现，Intervia Photodielectric 8023-10 湿度敏感层和 CMOS 电容至电压转换器。