CMOS 中的自校准湿度传感器，无需后处理。

Self-calibrated humidity sensor in CMOS without post-processing.

机构信息

Maenaka Human-sensing Fusion Project, 8111, Shosha 2167, Himeji-shi, Hyogo-ken, Japan.

出版信息

Sensors (Basel). 2012;12(1):226-32. doi: 10.3390/s120100226. Epub 2011 Dec 27.

DOI:10.3390/s120100226

PMID:22368466

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3279210/

Abstract

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

摘要

一款在 LFoundry 0.15μm CMOS 工艺下无需后处理而开发的、具有 10%相对湿度精度的、功耗为 1.1μW 的电压输出型湿度传感器。该传感器由编织的横向电极阵列组成，采用 CMOS 顶层金属实现，湿度敏感层为 Intervia Photodielectric 8023D-10，一个 CMOS 电容至电压转换器，以及自校准电路。