Hu Yu-Chih, Dai Ching-Liang, Hsu Cheng-Chih
Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan.
Department of Electro-Optical Engineering, Yuan Ze University, Taoyuan 320, Taiwan.
Sensors (Basel). 2014 Mar 3;14(3):4177-88. doi: 10.3390/s140304177.
A humidity microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.18 μm CMOS (complementary metal oxide semiconductor) process was presented. The integrated sensor chip consists of a humidity sensor and a readout circuit. The humidity sensor is composed of a sensitive film and interdigitated electrodes. The sensitive film is titanium dioxide prepared by the sol-gel method. The titanium dioxide is coated on the interdigitated electrodes. The humidity sensor requires a post-process to remove the sacrificial layer and to coat the titanium dioxide. The resistance of the sensor changes as the sensitive film absorbs or desorbs vapor. The readout circuit is employed to convert the resistance variation of the sensor into the output voltage. The experimental results show that the integrated humidity sensor has a sensitivity of 4.5 mV/RH% (relative humidity) at room temperature.
介绍了一种采用商用0.18μm互补金属氧化物半导体（CMOS）工艺制造的集成有片上读出电路的湿度微传感器。该集成传感器芯片由湿度传感器和读出电路组成。湿度传感器由敏感膜和叉指电极组成。敏感膜是通过溶胶-凝胶法制备的二氧化钛。二氧化钛涂覆在叉指电极上。湿度传感器需要进行后处理以去除牺牲层并涂覆二氧化钛。当敏感膜吸收或解吸蒸汽时，传感器的电阻会发生变化。读出电路用于将传感器的电阻变化转换为输出电压。实验结果表明，该集成湿度传感器在室温下的灵敏度为4.5mV/RH%（相对湿度）。
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