Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan.
Sensors (Basel). 2011;11(8):8143-51. doi: 10.3390/s110808143. Epub 2011 Aug 19.
This study presents the fabrication and characterization of a humidity microsensor that consists of interdigitated electrodes and a sensitive film. The area of the humidity microsensor is about 2 mm(2). The sensitive film is polyaniline doping polyvinyl alcohol (PVA) that is prepared by the sol-gel method, and the film has nanofiber and porous structures that help increase the sensing reaction. The commercial 0.35 μm Complimentary Metal Oxide Semiconductor (CMOS) process is used to fabricate the humidity microsensor. The sensor needs a post-CMOS process to etch the sacrificial layer and to coat the sensitive film on the interdigitated electrodes. The sensor produces a change in resistance as the polyaniline/PVA film absorbs or desorbs vapor. Experimental results show that the sensitivity of the humidity sensor is about 12.6 kΩ/%RH at 25 °C.
本研究提出了一种由叉指电极和敏感膜组成的湿度微传感器的制造和特性。湿度微传感器的面积约为 2 平方毫米。敏感膜是通过溶胶-凝胶法制备的掺杂聚苯胺的聚乙烯醇(PVA),该膜具有纳米纤维和多孔结构,有助于增加传感反应。商业的 0.35 微米互补金属氧化物半导体(CMOS)工艺用于制造湿度微传感器。传感器需要在后 CMOS 工艺中刻蚀牺牲层,并在叉指电极上涂覆敏感膜。传感器的电阻会随着聚苯胺/PVA 薄膜吸收或解吸蒸汽而发生变化。实验结果表明,在 25°C 时,湿度传感器的灵敏度约为 12.6 kΩ/%RH。