National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China.
ACS Appl Mater Interfaces. 2012 Mar;4(3):1219-24. doi: 10.1021/am201306c. Epub 2012 Mar 6.
Because of the large quantities of edges, graphene can serve as an efficient edge emitter for field emission (FE). Cesium iodide (CsI) coating was promising to enhance the electron emission and utilized in FE applications. In this work, FE of graphene sheets after electrophoretic deposition (ED) was studied. Electron emission property of GS was obviously improved by coating with CsI. The turn-on field of GS decreased from 4.4 to 2.5 V/ μm; and threshold field decreased from 9 to 5.8 V/μm, respectively. This FE improvement must due to a higher effective density of emission site generated around the GS surface after coating. Scanning electron microscopy (SEM) and computation were taken to reveal the influence after coating. Investigations of CsI coated MWCNTs were also compared in order to better understand the origin of the low turn-on electric field obtained by GS.
由于边缘数量众多，石墨烯可以作为场发射 (FE) 的高效边缘发射器。碘化铯 (CsI) 涂层有望增强电子发射，并应用于 FE 应用中。在这项工作中，研究了电泳沉积 (ED) 后石墨烯片的场发射。CsI 涂层明显改善了 GS 的电子发射性能。GS 的开启电场从 4.4 降至 2.5 V/μm；阈值场分别从 9 降至 5.8 V/μm。这种场发射的改善一定是由于在涂层后 GS 表面周围产生了更高的有效发射点密度。扫描电子显微镜 (SEM) 和计算被用来揭示涂层后的影响。还比较了 CsI 涂层多壁碳纳米管 (MWCNTs) 的研究，以便更好地理解由 GS 获得的低开启电场的起源。
