Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland 20742-4111, USA.
Nano Lett. 2012 Jan 11;12(1):469-72. doi: 10.1021/nl203851g. Epub 2011 Dec 22.
Thin (6-7 quintuple layer) topological insulator Bi(2)Se(3) quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi(2)Se(3) regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV and additional features implying excited states.
使用超薄（2-4 个五重层）Bi2Se3 区域实现半导体势垒的 6-7 个五重层拓扑绝缘体 Bi2Se3 量子点器件已被证明，通过栅极电压，半导体势垒的电阻可以从欧姆到隧道传导进行调节。输运谱学显示具有大的充电能量>5 meV 的库仑阻塞以及意味着激发态的附加特征。
