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拓扑绝缘体中的量子电容。

Quantum capacitance in topological insulators.

机构信息

Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa, USA.

出版信息

Sci Rep. 2012;2:669. doi: 10.1038/srep00669. Epub 2012 Sep 18.

DOI:10.1038/srep00669
PMID:22993694
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC3444751/
Abstract

Topological insulators show unique properties resulting from massless, Dirac-like surface states that are protected by time-reversal symmetry. Theory predicts that the surface states exhibit a quantum spin Hall effect with counter-propagating electrons carrying opposite spins in the absence of an external magnetic field. However, to date, the revelation of these states through conventional transport measurements remains a significant challenge owing to the predominance of bulk carriers. Here, we report on an experimental observation of Shubnikov-de Haas oscillations in quantum capacitance measurements, which originate from topological helical states. Unlike the traditional transport approach, the quantum capacitance measurements are remarkably alleviated from bulk interference at high excitation frequencies, thus enabling a distinction between the surface and bulk. We also demonstrate easy access to the surface states at relatively high temperatures up to 60 K. Our approach may eventually facilitate an exciting exploration of exotic topological properties at room temperature.

摘要

拓扑绝缘体具有独特的性质,源于无质量的狄拉克型表面态,这些表面态受时间反演对称性保护。理论预测,在没有外磁场的情况下,表面态表现出量子自旋霍尔效应,具有相反自旋的反向传播电子。然而,迄今为止,由于体载流子的主导地位,通过传统的输运测量来揭示这些状态仍然是一个重大挑战。在这里,我们报告了在量子电容测量中观察到的 Shubnikov-de Haas 振荡的实验结果,这些振荡源于拓扑螺旋态。与传统的输运方法不同,量子电容测量在高激发频率下显著减轻了体干扰,从而能够区分表面和体。我们还证明了在相对较高的温度(高达 60 K)下很容易进入表面态。我们的方法最终可能有助于在室温下探索奇异的拓扑性质。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/71dcf9c8d414/srep00669-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/ef13c0888d8d/srep00669-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/920eca0a9759/srep00669-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/183b833fb054/srep00669-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/684da13d7841/srep00669-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/71dcf9c8d414/srep00669-f5.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/ef13c0888d8d/srep00669-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/920eca0a9759/srep00669-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/183b833fb054/srep00669-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/684da13d7841/srep00669-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/7a2a/3444751/71dcf9c8d414/srep00669-f5.jpg

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本文引用的文献

1
Topological insulator nanostructures for near-infrared transparent flexible electrodes.拓扑绝缘体纳米结构用于近红外透明柔性电极。
Nat Chem. 2012 Feb 26;4(4):281-6. doi: 10.1038/nchem.1277.
2
Josephson supercurrent through a topological insulator surface state.约瑟夫森超导电流通过拓扑绝缘体表面态。
Nat Mater. 2012 Feb 19;11(5):417-21. doi: 10.1038/nmat3255.
3
Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure.在压力下 BiTeI 中非中心对称拓扑绝缘相的出现。
Sci Rep. 2015 Mar 30;5:9479. doi: 10.1038/srep09479.
4
Evaluation of mobility in thin Bi2Se3 topological insulator for prospects of local electrical interconnects.用于局部电气互连前景的薄Bi2Se3拓扑绝缘体中迁移率的评估。
Sci Rep. 2014 Oct 30;4:6838. doi: 10.1038/srep06838.
5
Quantum corrections crossover and ferromagnetism in magnetic topological insulators.量子修正交叉与磁性拓扑绝缘体中的铁磁性。
Sci Rep. 2013;3:2391. doi: 10.1038/srep02391.
6
Quantum capacitance of an ultrathin topological insulator film in a magnetic field.磁场中超薄拓扑绝缘体膜的量子电容。
Sci Rep. 2013;3:1261. doi: 10.1038/srep01261. Epub 2013 Feb 12.
7
Tuning the vertical location of helical surface states in topological insulator heterostructures via dual-proximity effects.通过双近邻效应调谐拓扑绝缘体异质结中的螺旋表面态的垂直位置。
Sci Rep. 2013;3:1233. doi: 10.1038/srep01233. Epub 2013 Feb 6.
Nat Commun. 2012 Feb 14;3:679. doi: 10.1038/ncomms1679.
4
Tunable Dirac cone in the topological insulator Bi(2-x)Sb(x)Te(3-y)Se(y).拓扑绝缘体 Bi(2-x)Sb(x)Te(3-y)Se(y)中的可调狄拉克锥。
Nat Commun. 2012 Jan 24;3:636. doi: 10.1038/ncomms1639.
5
Topological insulator quantum dot with tunable barriers.具有可调势垒的拓扑绝缘子量子点。
Nano Lett. 2012 Jan 11;12(1):469-72. doi: 10.1021/nl203851g. Epub 2011 Dec 22.
6
Gate-tuned normal and superconducting transport at the surface of a topological insulator.拓扑绝缘体表面的门控正常和超导输运。
Nat Commun. 2011 Dec 6;2:575. doi: 10.1038/ncomms1586.
7
Band structure engineering in (Bi(1-x)Sb(x))(2)Te(3) ternary topological insulators.(Bi(1-x)Sb(x))(2)Te(3) 三元拓扑绝缘体中的能带结构工程。
Nat Commun. 2011 Dec 6;2:574. doi: 10.1038/ncomms1588.
8
Control over topological insulator photocurrents with light polarization.用光偏振控制拓扑绝缘体光电流。
Nat Nanotechnol. 2011 Dec 4;7(2):96-100. doi: 10.1038/nnano.2011.214.
9
Opportunities in chemistry and materials science for topological insulators and their nanostructures.拓扑绝缘体及其纳米结构在化学和材料科学中的机遇。
Nat Chem. 2011 Oct 24;3(11):845-9. doi: 10.1038/nchem.1171.
10
Observation of dirac holes and electrons in a topological insulator.观察拓扑绝缘体中的狄拉克空洞和电子。
Phys Rev Lett. 2011 Jul 1;107(1):016801. doi: 10.1103/PhysRevLett.107.016801. Epub 2011 Jun 27.