Laboratory of Advanced Materials (MOE), Department of Materials Science and Engineering, Tsinghua University , Beijing 100084, China.
ACS Appl Mater Interfaces. 2012 Jan;4(1):447-53. doi: 10.1021/am201518v. Epub 2011 Dec 27.
We report the design and fabrication of Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/Cu resistive memory devices that utilize the Cu redox reaction and conformational features of PEDOT:PSS to achieve resistive switching. The top Cu electrode acts as the source of the redox ions that are injected through the PEDOT:PSS layer during the forming process. The Cu filament is confirmed directly using the cross-sectional images of transmission electron microscopy and energy-dispersive X-ray spectroscopy. The resultant resistive memory devices can operate over a small voltage range, i.e., the switching-on threshold voltage is less than 1.5 V and the absolute value of the switching-off threshold voltage is less than 1.0 V. The on/off current ratio is as large as 1 × 10(4) and the two different resistance states can be maintained over 10(6) s. Moreover, the devices present good thermal stability that the resistive switching can be observed even at temperature up to 160 °C, at which the oxidation of the Cu top electrode is the failure factor. Furthermore, the cause of failure for Al/PEDOT:PSS/Cu memory devices at higher temperature is confirmed to be the oxidation of Cu top electrode.
我们报告了 Al/poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/Cu 电阻式存储器件的设计和制造，该器件利用 Cu 的氧化还原反应和 PEDOT:PSS 的构象特征来实现电阻切换。顶部的 Cu 电极充当氧化还原离子的源，这些离子在形成过程中通过 PEDOT:PSS 层注入。通过透射电子显微镜和能量色散 X 射线光谱的横截面图像可以直接确认 Cu 细丝的存在。所得的电阻式存储器件可以在小电压范围内工作，即开关导通阈值电压小于 1.5 V，开关截止阈值电压的绝对值小于 1.0 V。导通/截止电流比高达 1×10(4)，并且两种不同的电阻状态可以在 10(6) s 以上保持。此外，这些器件具有良好的热稳定性，即使在高达 160°C 的温度下也可以观察到电阻切换，此时 Cu 顶电极的氧化是失效因素。此外，高温下 Al/PEDOT:PSS/Cu 存储器件失效的原因被确认为 Cu 顶电极的氧化。
