Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
Phys Rev Lett. 2011 Dec 16;107(25):256805. doi: 10.1103/PhysRevLett.107.256805.
The trap-assisted recombination of electrons and holes in organic semiconductors is investigated. The extracted capture coefficients of the trap-assisted recombination process are thermally activated with an identical activation energy as measured for the hole mobility μ(p). We demonstrate that the rate limiting step for this mechanism is the diffusion of free holes towards trapped electrons in their mutual Coulomb field, with the capture coefficient given by (q/ε)μ(p). As a result, both the bimolecular and trap-assisted recombination processes in organic semiconductors are governed by the charge carrier mobilities, allowing predictive modeling of organic light-emitting diodes.
研究了有机半导体中电子和空穴的陷阱辅助复合过程。提取的陷阱辅助复合过程的俘获系数随温度呈热激活分布，其激活能与空穴迁移率 μ(p) 的测量值相同。我们证明了该机制的限速步骤是在它们相互的库仑场中，自由空穴向被陷阱捕获的电子的扩散，俘获系数为(q/ε)μ(p)。因此，有机半导体中的双分子复合和陷阱辅助复合过程都受电荷载流子迁移率的控制，从而可以对有机发光二极管进行预测性建模。
