Dipartimento di Chimica S. Cannizzaro, Università degli Studi di Palermo, Viale delle Scienze - Parco D'Orleans II - ed. 17, Palermo, Italy.
Adv Mater. 2012 Feb 14;24(7):951-6. doi: 10.1002/adma.201103800. Epub 2012 Jan 17.
Monolayer field-effect transistors based on a high-mobility n-type polymer are demonstrated. The accurate control of the long-range order by Langmuir-Schäfer (LS) deposition yields dense polymer packing exhibiting good injection properties, relevant current on/off ratio and carrier mobility in a staggered configuration. Layer-by-layer LS film transistors of increasing thickness are fabricated and their performance compared to those of spin-coated films.
基于高迁移率 n 型聚合物的单层场效应晶体管得到了展示。通过 Langmuir-Schäfer(LS)沉积实现的长程有序的精确控制,得到了致密的聚合物堆积,在交错结构中表现出良好的注入性能、相关的电流开关比和载流子迁移率。逐层制备了 LS 薄膜晶体管,并对其性能与旋涂薄膜的性能进行了比较。