Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA.
Nano Lett. 2012 Mar 14;12(3):1340-3. doi: 10.1021/nl203895x. Epub 2012 Feb 1.
One-dimensional (1D) sub-bands in cylindrical InAs nanowires (NWs) are electrically mapped as a function of NW diameter in the range of 15-35 nm. At low temperatures, stepwise current increases with the gate voltage are clearly observed and attributed to the electron transport through individual 1D sub-bands. The 2-fold degeneracy in certain sub-band energies predicted by simulation due to structural symmetry is experimentally observed for the first time. The experimentally obtained sub-band energies match the simulated results, shedding light on both the energies of the sub-bands as well as the number of sub-bands populated per given gate voltage and diameter. This work serves to provide better insight into the electrical transport behavior of 1D semiconductors.
一维（1D）子带在圆柱状 InAs 纳米线（NWs）中作为 NW 直径的函数进行电测绘，直径范围在 15-35nm 之间。在低温下，随着栅极电压的逐步增加，电流明显增加，这归因于电子通过单个 1D 子带的传输。由于结构对称性，模拟预测某些子带能量的 2 倍简并首次得到实验观察。实验获得的子带能量与模拟结果相匹配，为子带的能量以及给定栅极电压和直径下填充的子带数量提供了依据。这项工作有助于更好地了解一维半导体的电导行为。
