Gu Jie, Zhang Qingzhu, Wu Zhenhua, Yao Jiaxin, Zhang Zhaohao, Zhu Xiaohui, Wang Guilei, Li Junjie, Zhang Yongkui, Cai Yuwei, Xu Renren, Xu Gaobo, Xu Qiuxia, Yin Huaxiang, Luo Jun, Wang Wenwu, Ye Tianchun
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences (CAS), Beijing 100029, China.
School of Electronic, Electrical and Communication Engineering, University of the Chinese Academy of Sciences, Beijing 100049, China.
Nanomaterials (Basel). 2021 Jan 26;11(2):309. doi: 10.3390/nano11020309.
A 16-nm-L p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.
基于主流的体鳍式场效应晶体管（FinFET）技术，制备了一种16纳米长的p型全栅（GAA）硅纳米线（Si NW）金属氧化物半导体场效应晶体管（MOSFET）。系统研究了常规MOSFET电学特性的温度依赖性以及低温下的量子输运。我们证明了GAA Si NW MOSFET在低温下具有良好的栅极控制能力和体效应免疫能力，并通过实验观察到纳米线（110）沟道方向子带结构中双重简并空穴子带的输运。此外，GAA Si NW MOSFET还表现出明显的弹道输运特性。由于典型MOSFET存在间隔层，在较低偏压下也成功实现了量子干涉。
