具有低暗电流的超紧凑型45GHz与CMOS兼容的锗波导光电二极管。

Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

作者信息

DeRose Christopher T, Trotter Douglas C, Zortman William A, Starbuck Andrew L, Fisher Moz, Watts Michael R, Davids Paul S

机构信息

Sandia National Laboratory Applied Microphotonic Systems, Albuquerque, NM 87185, USA.

出版信息

Opt Express. 2011 Dec 5;19(25):24897-904. doi: 10.1364/OE.19.024897.

DOI:10.1364/OE.19.024897

PMID:22273883

Abstract

We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

摘要

我们展示了一种紧凑的1.3×4μm²锗波导光电二极管，它集成在与CMOS兼容的硅光子工艺流程中。该光电二极管具有同类最佳的45GHz 3dB截止频率、0.8A/W的响应度和3nA的暗电流。该器件的低固有电容可能使未来的光数据通信接收器无需跨阻放大器，从而实现超低功耗的光通信。