Artoni Pietro, Irrera Alessia, Iacona Fabio, Pecora Emanuele F, Franzò Giorgia, Priolo Francesco
MATIS IMM-CNR, Catania, Italy.
Opt Express. 2012 Jan 16;20(2):1483-90. doi: 10.1364/OE.20.001483.
In this paper we describe the luminescence properties of Si nanowires (NWs) prepared by a maskless synthesis technique, based on the Au-catalyzed wet etching of Si substrates by an aqueous solution of H(2)O(2) and HF. A strong room temperature photoluminescence (PL), centered at about 690 nm, is observed when Si NWs are optically excited. The detailed analysis of the steady-state and time-resolved PL properties of the system as a function of aging, temperature and pump power allows to demonstrate that the emission is due to the radiative recombination of quantum confined excitons. These results open the route towards novel applications of Si NWs in photonics as efficient light sources.
在本文中，我们描述了通过无掩膜合成技术制备的硅纳米线（NWs）的发光特性，该技术基于用H₂O₂和HF水溶液对硅衬底进行金催化湿法蚀刻。当对硅纳米线进行光激发时，观察到在约690nm处有强烈的室温光致发光（PL）。对该系统的稳态和时间分辨PL特性随老化、温度和泵浦功率的函数进行详细分析，表明该发射是由于量子限制激子的辐射复合所致。这些结果为硅纳米线在光子学中作为高效光源的新应用开辟了道路。
