IPCF CNR, viale F, Stagno d'Alcontres 37, Faro Superiore, Messina 98158, Italy.
Nanoscale Res Lett. 2014 Feb 12;9(1):74. doi: 10.1186/1556-276X-9-74.
Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 μm. NW diameter is compatible with the occurrence of quantum confinement effects and, accordingly, we observed light emission assignable to the presence of Si and Ge nanostructures. We performed a detailed study of the photoluminescence properties of the NWs, with particular attention to the excitation and de-excitation properties as a function of the temperature and of the excitation photon flux, evaluating the excitation cross section and investigating the presence of non-radiative phenomena. PACS: 61.46.Km; 78.55.-m; 78.67.Lt.
多量子阱 Si/Ge 纳米线（NWs）通过结合分子束外延沉积和金属辅助湿法刻蚀来实现，这是一种用于合成极密（约 1011 cm-2）NWs 阵列的低成本技术，具有高且可控的纵横比。特别是，我们制备了具有约 8nm 平均直径和 1.0 至 2.7μm 长度的超薄 Si/Ge NWs。NW 直径与量子限制效应的发生相兼容，因此，我们观察到可归因于 Si 和 Ge 纳米结构存在的发光。我们对 NWs 的光致发光性质进行了详细研究，特别关注了作为温度和激发光子通量函数的激发和去激发性质，评估了激发截面并研究了非辐射现象的存在。PACS：61.46.Km；78.55.-m；78.67.Lt。
