IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA.
ACS Nano. 2012 Mar 27;6(3):2610-6. doi: 10.1021/nn205106z. Epub 2012 Feb 16.
A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene devices based on a field-effect transistor configuration. This NDR effect is a universal phenomenon for graphene and is demonstrated in devices fabricated with different types of graphene materials and gate dielectrics. Operation of conventional NDR devices is usually based on quantum tunneling or intervalley carrier transfer, whereas the NDR behavior observed here is unique to the ambipolar behavior of zero-bandgap graphene and is associated with the competition between electron and hole conduction as the drain bias increases. These three terminal graphene NDR devices offer more operation flexibility than conventional two-terminal devices based on tunnel diodes, Gunn diodes, or molecular devices, and open up new opportunities for graphene in microwave to terahertz applications.
在基于场效应晶体管结构的三端石墨烯器件中发现了一种新的负微分电阻（NDR）机制。这种 NDR 效应是石墨烯的普遍现象，并在使用不同类型的石墨烯材料和栅介质制造的器件中得到了证明。传统 NDR 器件的工作通常基于量子隧穿或谷间载流子转移，而这里观察到的 NDR 行为是零带隙石墨烯的双极性行为所特有的，与漏极偏压增加时电子和空穴传导之间的竞争有关。与基于隧道二极管、耿氏二极管或分子器件的传统二端器件相比，这些三端石墨烯 NDR 器件提供了更多的操作灵活性，并为石墨烯在微波到太赫兹应用中开辟了新的机会。
