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使用聚焦氦离子束对悬浮氮化硅膜进行直接铣削和传输铣削。

Direct and transmission milling of suspended silicon nitride membranes with a focused helium ion beam.

作者信息

Marshall Michael M, Yang Jijin, Hall Adam R

机构信息

Joint School of Nanoscience and Nanoengineering, University of North Carolina Greensboro, Greensboro, North Carolina 27401, USA.

出版信息

Scanning. 2012 Mar-Apr;34(2):101-6. doi: 10.1002/sca.21003. Epub 2012 Feb 13.

DOI:10.1002/sca.21003
PMID:22331671
Abstract

Helium ion milling of suspended silicon nitride thin films is explored. Milled squares patterned by scanning helium ion microscope are subsequently investigated by atomic force microscopy and the relation between ion dose and milling depth is measured for both the direct (side of ion incidence) and transmission (side opposite to ion incidence) regimes. We find that direct-milling depth varies linearly with beam dose while transmission-milling depth varies with the square of the beam dose, resulting in a straightforward method of controlling local film thickness.

摘要

对悬浮氮化硅薄膜的氦离子铣削进行了研究。通过扫描氦离子显微镜图案化的铣削方块随后用原子力显微镜进行研究,并测量了直接(离子入射侧)和透射(与离子入射相对的一侧)模式下离子剂量与铣削深度之间的关系。我们发现,直接铣削深度随束流剂量呈线性变化,而透射铣削深度随束流剂量的平方变化,从而产生了一种控制局部薄膜厚度的直接方法。

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