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无掩模等离子体刻蚀技术实现 22nm 分辨率。

Maskless plasmonic lithography at 22 nm resolution.

机构信息

Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, USA.

出版信息

Sci Rep. 2011;1:175. doi: 10.1038/srep00175. Epub 2011 Nov 29.

Abstract

Optical imaging and photolithography promise broad applications in nano-electronics, metrologies, and single-molecule biology. Light diffraction however sets a fundamental limit on optical resolution, and it poses a critical challenge to the down-scaling of nano-scale manufacturing. Surface plasmons have been used to circumvent the diffraction limit as they have shorter wavelengths. However, this approach has a trade-off between resolution and energy efficiency that arises from the substantial momentum mismatch. Here we report a novel multi-stage scheme that is capable of efficiently compressing the optical energy at deep sub-wavelength scales through the progressive coupling of propagating surface plasmons (PSPs) and localized surface plasmons (LSPs). Combining this with airbearing surface technology, we demonstrate a plasmonic lithography with 22 nm half-pitch resolution at scanning speeds up to 10 m/s. This low-cost scheme has the potential of higher throughput than current photolithography, and it opens a new approach towards the next generation semiconductor manufacturing.

摘要

光学成象和光致抗蚀剂在纳米电子学、计量学和单分子生物学方面有广泛的应用。然而,光的衍射对光学分辨率造成了基本限制,并且对纳米尺度制造的缩小提出了严峻的挑战。表面等离激元由于具有较短的波长而被用来规避衍射极限。然而,由于动量失配较大,这种方法在分辨率和能量效率之间存在折衷。在这里,我们报告了一种新的多阶段方案,该方案通过传播表面等离激元(PSPs)和局域表面等离激元(LSPs)的逐步耦合,能够有效地在深亚波长尺度上压缩光学能量。将其与空气轴承表面技术相结合,我们展示了一种在扫描速度高达 10 m/s 时具有 22nm 半节距分辨率的等离子体光刻技术。这种低成本方案具有比当前光刻更高的吞吐量的潜力,为下一代半导体制造开辟了一条新途径。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/3d68/3240963/6b3434588969/srep00175-f1.jpg

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