Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
Nano Lett. 2012 Mar 14;12(3):1385-91. doi: 10.1021/nl204053w. Epub 2012 Feb 24.
Epitaxial growth of a highly strained, coherent SiGe alloy shell around a Ge nanowire core is investigated as a method to achieve surface passivation and carrier confinement, important in realizing nanowire devices. The high photoluminescence intensity observed from the core-shell nanowires with spectral features similar to that of bulk Ge indicates effective surface passivation. Thermal stability of these core-shell heterostructures has been systematically investigated, with a method demonstrated to avoid misfit strain relaxation during postgrowth annealing.
研究了在锗纳米线芯周围外延生长高度应变、相干的 SiGe 合金壳，作为实现表面钝化和载流子限制的方法，这对于实现纳米线器件非常重要。从具有与体硅相似光谱特征的核壳纳米线中观察到的高光致发光强度表明实现了有效的表面钝化。系统地研究了这些核壳异质结构的热稳定性，提出了一种在后续生长退火过程中避免失配应变弛豫的方法。
