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纳米线核-多壳层异质结构的关键尺寸分析

Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures.

作者信息

Yan Xin, Fan Shuyu, Zhang Xia, Ren Xiaomin

机构信息

State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China.

出版信息

Nanoscale Res Lett. 2015 Dec;10(1):389. doi: 10.1186/s11671-015-1097-7. Epub 2015 Oct 6.

Abstract

Critical dimensions for nanowire core-multishell heterostructures are analyzed by using finite-element method based on the energy equilibrium criteria. Results show that the nanowire core-shell heterostructure can sufficiently reduce the strain in the shell and increase the critical shell thickness. The critical dimensions for the nanowire core-multishell heterostructure are determined by the stress fields generated at two heterointerfaces. For thin barrier, the critical dimensions decrease as the core radius increases, while when the barrier is thick enough, the critical dimensions show an increase with the increase of core radius conversely. This can be attributed to a competition between the lattice mismatch and strain distribution, which dominate the critical dimensions alternatively. Two critical quantum well thicknesses are obtained in the nanowire core-multishell heterostructure. Below the dislocation-free critical thickness, the structure will be coherent regardless of the barrier thickness. While above the dislocation-unavoidable thickness, dislocations are always energetically favored. In the dislocation-controllable region between the two critical thicknesses, coherent structure can be obtained via controlling the well and barrier thicknesses. The results are in good agreement with the experimental data and may serve as guidance for the design of coherent nanowire core-multishell quantum well structures and devices.

摘要

基于能量平衡准则,采用有限元方法分析了纳米线核-多壳异质结构的临界尺寸。结果表明,纳米线核-壳异质结构能够充分降低壳层中的应变并增加临界壳层厚度。纳米线核-多壳异质结构的临界尺寸由两个异质界面处产生的应力场决定。对于薄势垒,临界尺寸随核半径的增加而减小,而当势垒足够厚时,临界尺寸反而随核半径的增加而增大。这可归因于晶格失配和应变分布之间的竞争,它们交替主导着临界尺寸。在纳米线核-多壳异质结构中获得了两个临界量子阱厚度。低于无位错临界厚度时,无论势垒厚度如何,结构都是相干的。而高于位错不可避免厚度时,位错在能量上总是有利的。在两个临界厚度之间的位错可控区域内,可通过控制阱层和势垒层厚度获得相干结构。结果与实验数据吻合良好,可为相干纳米线核-多壳量子阱结构和器件的设计提供指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/56ac/4595417/47fce067a0b1/11671_2015_1097_Fig1_HTML.jpg

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