Li Li-Gong, Liu Shu-Man, Luo Shuai, Yang Tao, Wang Li-Jun, Liu Feng-Qi, Ye Xiao-Ling, Xu Bo, Wang Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
Nanoscale Res Lett. 2012 Feb 28;7(1):160. doi: 10.1186/1556-276X-7-160.
InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the samples by atomic force microscopy and high-resolution X-ray diffraction demonstrate flat surface morphology and good crystalline quality. The lattice mismatch of approximately 0.18% between the SL and GaSb substrate is small compared to the MOCVD-grown supperlattice samples reported to date in the literature. Considerable optical absorption in 2- to 8-μm infrared region has been realized.PACS: 78.67.Pt; 81.15.Gh; 63.22.Np; 81.05.Ea.
通过金属有机化学气相沉积（MOCVD）在（100）GaSb衬底上生长InAs/GaSb II型超晶格。引入一个连接InAs和GaSb层的混合As和Sb原子平面，以补偿超晶格中InAs层产生的拉伸应变。通过原子力显微镜和高分辨率X射线衍射对样品进行表征，结果表明表面形态平整，晶体质量良好。与文献中迄今报道的MOCVD生长的超晶格样品相比，该超晶格与GaSb衬底之间约0.18%的晶格失配较小。在2至8μm红外区域实现了可观的光吸收。物理和天文学分类号：78.67.Pt；81.15.Gh；63.2.Np；81.05.Ea。
