School of Physics & Astronomy, University of Manchester, Manchester M13 9PL, United Kingdom.
Nano Lett. 2012 Mar 14;12(3):1707-10. doi: 10.1021/nl3002205. Epub 2012 Mar 1.
We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.
我们研究了不同导电材料（石墨、石墨烯和金）在阻挡层两侧的超薄六方氮化硼（h-BN）晶体层的电子特性。隧道电流随 h-BN 原子层的数量呈指数衰减，直至单层厚度。跨越不同厚度 h-BN 阶地的导电原子力显微镜扫描显示出隧道电流具有高度的均匀性。我们的结果表明，原子级薄的 h-BN 作为一种无缺陷的介电材料，具有高击穿场强。它在隧道器件和具有高导电通道载流子密度的场效应晶体管中具有很大的应用潜力。
