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基于氧化物电解质的阻变存储器中导电丝的动态生长/溶解的实时观察。

Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte-based ReRAM.

机构信息

Lab of Nanofabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.

出版信息

Adv Mater. 2012 Apr 10;24(14):1844-9. doi: 10.1002/adma.201104104. Epub 2012 Mar 7.

DOI:10.1002/adma.201104104
PMID:22407902
Abstract

Evolution of growth/dissolution conductive filaments (CFs) in oxide-electrolyte-based resistive switching memories are studied by in situ transmission electron microscopy. Contrary to what is commonly believed, CFs are found to start growing from the anode (Ag or Cu) rather than having to reach the cathode (Pt) and grow backwards. A new mechanism based on local redox reactions inside the oxide-electrolyte is proposed.

摘要

通过原位透射电子显微镜研究了基于氧化物电解质的电阻式随机存取存储器中生长/溶解导电丝（CFs）的演变。与普遍认为的相反，发现 CFs 是从阳极（Ag 或 Cu）开始生长的，而不必到达阴极（Pt）并向后生长。提出了一种基于氧化物电解质内部局部氧化还原反应的新机制。

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