Department of Electronics and Computer Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
Sci Rep. 2017 Jun 8;7(1):3065. doi: 10.1038/s41598-017-02330-x.
Ag-doped polymer (polyethylene oxide: PEO) conductive-bridging-random-access-memory (CBRAM) cell using inert Pt electrodes is a potential electro-forming free CBRAM cells in which electro-forming and electro-breaking of nanoscale (16~22-nm in diameter) conical or cylindrical Ag filaments occurs after a set or reset bias is applied. The dependency of the morphologies of the Ag filaments in the PEO polymer electrolyte indicates that the electro-formed Ag filaments bridging the Pt cathode and anode are generated by Ag+ ions drifting in the PEO polymer electrolyte toward the Pt anode and that Ag dendrites grow via a reduction process from the Pt anode, whereas electro-breaking of Ag filaments occurs through the oxidation of Ag atoms in the secondary dendrites and the drift of Ag ions toward the Pt cathode. The Ag doping concentration in the PEO polymer electrolyte determines the bipolar switching characteristics; i.e., the set voltage slightly decreases, while the reset voltage and memory margin greatly increases with the Ag doping concentration.
采用惰性 Pt 电极的掺 Ag 聚合物（聚环氧乙烷：PEO）导电桥随机存取存储器（CBRAM）单元是一种潜在的无电成型 CBRAM 单元，在施加设定或重置偏压后，纳米级（直径 16~22nm）锥形或圆柱形 Ag 细丝会发生电成型和电断裂。PEO 聚合物电解质中 Ag 细丝的形态依赖性表明，在 Pt 阴极和阳极之间形成桥接的电成型 Ag 细丝是由 Ag+离子在 PEO 聚合物电解质中向 Pt 阳极漂移产生的，而 Ag 枝晶则通过从 Pt 阳极还原过程生长，而 Ag 细丝的电断裂则是通过二次枝晶中 Ag 原子的氧化和 Ag 离子向 Pt 阴极的漂移来实现的。PEO 聚合物电解质中的 Ag 掺杂浓度决定了双极性开关特性；即设定电压略有降低，而重置电压和存储裕度随着 Ag 掺杂浓度的增加而大大增加。
