School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA.
Nano Lett. 2012 Apr 11;12(4):2067-70. doi: 10.1021/nl300230k. Epub 2012 Mar 27.
Graphene has captured the imagination of researchers worldwide as an ideal two-dimensional material with exceptional electrical transport properties. The high electron and hole mobility quickly inspired scientists to search for electronic applications that require high-performance channel materials. However, the absence of a bandgap in graphene immediately revealed itself in terms of ambipolar device characteristics and the nonexistence of a device off-state. The question is: How can the superior electronic properties of graphene be harvested while dealing appropriately with its unique characteristics rather than enforcing conventional device concepts? Here, we report a novel device idea, a graphene-based frequency tripler, an application that employs an innovative electrostatic doping approach and exploits the unique ambipolar behavior of graphene.
石墨烯作为一种具有优异电学输运性能的理想二维材料,引起了全球研究人员的极大兴趣。其高电子和空穴迁移率很快激发了科学家们去寻找需要高性能沟道材料的电子应用。然而,石墨烯中没有带隙这一事实,立刻在双极性器件特性和器件关断状态不存在方面显现出来。问题是:如何在处理其独特特性的同时利用石墨烯的卓越电子性能,而不是强制采用传统的器件概念?在这里,我们报告了一个新颖的器件构想,即基于石墨烯的三倍频器,这一应用采用了创新的静电掺杂方法,并利用了石墨烯独特的双极性行为。