Toral-Lopez A, Marin E G, Pasadas F, Ganeriwala M D, Ruiz F G, Jiménez D, Godoy A
Dpto. Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Granada, Spain.
Departament d'Enginyeria Electrònica, Escola d'Enginyeria, Universitat Autònoma de Barcelona, Bellaterra, Spain.
Discov Nano. 2023 Oct 5;18(1):123. doi: 10.1186/s11671-023-03884-8.
Run-time device-level reconfigurability has the potential to boost the performance and functionality of numerous circuits beyond the limits imposed by the integration density. The key ingredient for the implementation of reconfigurable electronics lies in ambipolarity, which is easily accessible in a substantial number of two-dimensional materials, either by contact engineering or architecture device-level design. In this work, we showcase graphene as an optimal solution to implement high-frequency reconfigurable electronics. We propose and analyze a split-gate graphene field-effect transistor, demonstrating its capability to perform as a dynamically tunable frequency multiplier. The study is based on a physically based numerical simulator validated and tested against experiments. The proposed architecture is evaluated in terms of its performance as a tunable frequency multiplier, able to switch between doubler, tripler or quadrupler operation modes. Different material and device parameters are analyzed, and their impact is assessed in terms of the reconfigurable graphene frequency multiplier performance.
运行时设备级可重构性有潜力突破集成密度的限制，提升众多电路的性能和功能。实现可重构电子器件的关键要素在于双极性，通过接触工程或器件级架构设计，在大量二维材料中很容易实现双极性。在这项工作中，我们展示了石墨烯是实现高频可重构电子器件的最佳解决方案。我们提出并分析了一种分裂栅石墨烯场效应晶体管，证明了其作为动态可调倍频器的能力。该研究基于一个经过实验验证和测试的基于物理的数值模拟器。所提出的架构作为可调倍频器的性能进行了评估，能够在倍频器、三倍频器或四倍频器操作模式之间切换。分析了不同的材料和器件参数，并评估了它们对可重构石墨烯倍频器性能的影响。
