Department of Mechanical Engineering and the Materials Science and Engineering Program, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712, USA.
Nano Lett. 2012 May 9;12(5):2374-8. doi: 10.1021/nl300346j. Epub 2012 Apr 6.
We have devised a method to selectively fluorinate graphene by irradiating fluoropolymer-covered graphene with a laser. This fluoropolymer produces active fluorine radicals under laser irradiation that react with graphene but only in the laser-irradiated region. The kinetics of C-F bond formation is dependent on both the laser power and fluoropolymer thickness, proving that fluorination occurs by the decomposition of the fluoropolymer. Fluorination leads to a dramatic increase in the resistance of the graphene while the basic skeletal structure of the carbon bonding network is maintained. Considering the simplicity of the fluorination process and that it allows patterning with a nontoxic fluoropolymer as a solid source, this method could find application to generate fluorinated graphene in graphene-based electronic devices such as for the electrical isolation of graphene.
我们设计了一种通过用激光辐照含氟聚合物覆盖的石墨烯来选择性氟化石墨烯的方法。这种含氟聚合物在激光辐照下产生活性氟自由基，与石墨烯反应，但仅在激光辐照区域反应。C-F 键形成的动力学既依赖于激光功率，也依赖于含氟聚合物的厚度，证明氟化是通过含氟聚合物的分解来实现的。氟化导致石墨烯的电阻显著增加，而碳键合网络的基本骨架结构得以保持。考虑到氟化过程的简单性，以及它可以使用无毒的含氟聚合物作为固体源进行图案化，这种方法可能会应用于在基于石墨烯的电子器件中生成氟化石墨烯，例如用于石墨烯的电隔离。
