Peter Grünberg Institut (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany.
Nano Lett. 2012 Jun 13;12(6):2768-72. doi: 10.1021/nl204500r. Epub 2012 May 4.
In this Letter, we present the size effects on charge conduction in InN nanowires by comprehensive transport studies supported by theoretical analysis. A consistent model for highly degenerate narrow gap semiconductor nanowires is developed. In contrast to common knowledge of InN, there is no evidence of an enhanced surface conduction, however, high intrinsic doping exists. Furthermore, the room-temperature resistivity exhibits a strong increase when the lateral size becomes smaller than 80 nm and the temperature dependence changes from metallic to semiconductor-like. This effect is modeled by donor deactivation due to dielectric confinement, yielding a shift of the donor band to higher ionization energies as the size shrinks.
在这封信件中，我们通过理论分析支持的综合传输研究，展示了铟化 物纳米线中电荷传导的尺寸效应。我们开发了一个适用于高度简并窄隙半导体纳米线的一致模型。与人们对铟化 物的普遍认知相反，没有证据表明表面传导增强，然而，其本征掺杂确实很高。此外，当横向尺寸小于 80nm 时，室温电阻率表现出强烈的增加，并且温度依赖性从金属性变为半导体类似性。这种效应是通过介电限制导致的施主失活来模拟的，随着尺寸缩小，施主能带向更高的电离能移动。
