Department of Electrical and Computer Engineering, McGill University 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
Nano Lett. 2013;13(11):5509-13. doi: 10.1021/nl4030819. Epub 2013 Oct 3.
In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic growth process p-type InN can be realized for the first time by "direct" magnesium (Mg) doping. The presence of Mg acceptor energy levels in InN is confirmed by photoluminescence experiments, and a direct evidence of p-type conduction is demonstrated unambiguously by studying the transfer characteristics of InN nanowire field effect transistors. Moreover, the near-surface Fermi-level of InN can be tuned from nearly intrinsic to p-type degenerate by controlling Mg dopant incorporation, which is in contrast to the commonly observed electron accumulation on the grown surfaces of Mg-doped InN films. First-principle calculation using the VASP electronic package further shows that the p-type surface formed on Mg-doped InN nanowires is highly stable energetically.
在这封信件中，我们首次证明，通过“直接”镁（Mg）掺杂，利用纳米线结构和自催化生长过程，p 型氮化铟可以首次实现。通过光致发光实验证实了 Mg 受主能级的存在，并通过研究 InN 纳米线场效应晶体管的传输特性，明确地证明了 p 型传导的直接证据。此外，通过控制 Mg 掺杂剂的掺入，可以将 InN 的近表面费米能级从近本征调节到 p 型简并，这与通常观察到的 Mg 掺杂 InN 薄膜生长表面上的电子积累形成鲜明对比。使用 VASP 电子包的第一性原理计算进一步表明，在 Mg 掺杂 InN 纳米线表面形成的 p 型表面在能量上是高度稳定的。
