Centre for Research on Adaptive Nanostructures and Nanodevices and School of Physics, Trinity College Dublin, Dublin 2, Ireland.
Nanotechnology. 2012 May 11;23(18):185201. doi: 10.1088/0957-4484/23/18/185201. Epub 2012 Apr 13.
We have characterized the optoelectrical properties of networks of silver nanowires as a function of nanowire dimension by measuring transmittance (T) and sheet resistance (R(s)) for a large number of networks of different thicknesses fabricated from wires of different diameters (D) and lengths (L). We have analysed these data using both bulk-like and percolative models. We find the network DC conductivity to scale linearly with wire length while the optical conductivity is approximately invariant with nanowire length. The ratio of DC to optical conductivity, often taken as a figure of merit for transparent conductors, scales approximately as L/D. Interestingly, the percolative exponent, n, scales empirically as D², while the percolative figure of merit, Π, displays large values at low D. As high T and low R(s) are associated with low n and high Π, these data are consistent with improved optoelectrical performance for networks of low-D wires. We predict that networks of wires with D = 25 nm could give sheet resistance as low as 25 Ω/□ for T = 90%.
我们通过测量透射率（T）和方阻（R（s）），研究了不同直径（D）和长度（L）的银纳米线制成的大量不同厚度的网络的光电性能，这些网络的光电性能随纳米线尺寸而变化。我们使用了块状和渗流模型来分析这些数据。我们发现，网络的直流电导率与线长度呈线性关系，而光学电导率与纳米线长度近似不变。直流电导率与光学电导率的比值，通常被视为透明导体的一个重要指标，与 L/D 大致成比例。有趣的是，渗流指数 n 经验上与 D²成正比，而渗流优值 Π 在低 D 时表现出较大的值。由于高 T 和低 R（s）与低 n 和高 Π 相关，这些数据表明低 D 线材的网络具有更好的光电性能。我们预测，D = 25nm 的线材网络的方阻可能低至 25Ω/□，同时 T 为 90%。
