Ye Yu, Dai Lun, Gan Lin, Meng Hu, Dai Yu, Guo Xuefeng, Qin Guogang
State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing, 100871, China.
Nanoscale Res Lett. 2012 Apr 13;7(1):218. doi: 10.1186/1556-276X-7-218.
Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors, the MESFET-based photodetector can make a balance among overall performance parameters, which is desired for practical device applications. We also present our recent work on graphene nanoribbon/semiconductor NW (SNW) heterojunction light-emitting diodes (LEDs). Herein, by taking advantage of both graphene and SNWs, we have fabricated, for the first time, the graphene-based nano-LEDs. This achievement opens a new avenue for developing graphene-based nano-electroluminescence devices. Moreover, the novel graphene/SNW hybrid devices can also find use in other applications, such as high-sensitivity sensor and transparent flexible devices in the future.
半导体纳米线（NWs）或纳米带（NBs）因其在新型光电器件中的潜在应用而受到越来越多的关注。在本综述中，我们展示了我们在新型纳米带光电探测器方面的最新工作，其中采用了三端金属 - 半导体场效应晶体管（MESFET）器件结构。与常见的两端纳米带（纳米线）光电探测器相比，基于MESFET的光电探测器能够在整体性能参数之间取得平衡，这对于实际器件应用来说是很有必要的。我们还展示了我们在石墨烯纳米带/半导体纳米线（SNW）异质结发光二极管（LED）方面的最新工作。在此，通过利用石墨烯和SNW两者的优势，我们首次制造出了基于石墨烯的纳米LED。这一成果为开发基于石墨烯的纳米电致发光器件开辟了一条新途径。此外，这种新型的石墨烯/SNW混合器件在未来还可用于其他应用，如高灵敏度传感器和透明柔性器件。
